金属氧化物半导体场效应管

The BLM4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. • High power and current handing capability\n• Lead free product is acquired\n• Surface mount package;

Belling

上海贝岭

P-Channel Enhancement Mode Power MOSFET

文件：305.01 Kbytes 页数：6 Pages

Belling

上海贝岭

Dual P Channel Enhancement Mode MOSFET

文件：356.77 Kbytes 页数：7 Pages

bookly

百力微电子

Dual P-Channel Enhancement Mode MOSFET

FEATURES ■ -30V, -4.9A, RDS(ON) = 53mΩ @VGS = -10V. -3.6A, RDS(ON) = 95mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package

文件：499.89 Kbytes 页数：5 Pages

CET

华瑞

Dual P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switches

文件：1.05753 Mbytes 页数：9 Pages

VBSEMI

微碧半导体