BLM4953

金属氧化物半导体场效应管; • High power and current handing capability\n• Lead free product is acquired\n• Surface mount package\n;

The BLM4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications.\n\n

BLM4953

P-Channel Enhancement Mode Power MOSFET

BM4953

DualPChannelEnhancementModeMOSFET

CEM4953

DualP-ChannelEnhancementModeMOSFET

FEATURES ■-30V,-4.9A,RDS(ON)=53mΩ@VGS=-10V. -3.6A,RDS(ON)=95mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage

CEM4953

DualP-Channel30-V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •100UISTested APPLICATIONS •LoadSwitches

CEM4953A

DualP-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-4.5A,RDS(ON)=58mΩ@VGS=-10V. RDS(ON)=85mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ​​​​​​​■SurfacemountPackage

CEM4953H

DualP-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-4.5A,RDS(ON)=64mΩ@VGS=-10V. RDS(ON)=95mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Lead-freeplating;RoHScompliant.

CHM4953JPT

DualP-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT4.9Ampere FEATURE *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Leadfreeproductisacquired. *Smallflatpackage.(SO-8) APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrive

CJQ4953

P-Channel30-V(D-S)MOSFET

CJQ4953

Plastic-EncapsulateMOSFETS