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型号	下载订购	功能描述	制造商上传企业	LOGO
GT28F320B3TA90	文件：304.24 Kbytes Page：48 Pages	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e 文件：304.24 Kbytes 页数：48 Pages	INTEL 英特尔	INTEL
GT28F320C3B110	文件：384.02 Kbytes Page：59 Pages	3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：384.02 Kbytes 页数：59 Pages	INTEL 英特尔	INTEL
GT28F320C3B90	文件：384.02 Kbytes Page：59 Pages	3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：384.02 Kbytes 页数：59 Pages	INTEL 英特尔	INTEL
GT28F320C3BA100	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	INTEL 英特尔	INTEL
GT28F320C3BA110	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	INTEL 英特尔	INTEL
GT28F320C3BA70	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	INTEL 英特尔	INTEL
GT28F320C3BC70	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	INTEL 英特尔	INTEL
GT28F320C3BD70	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	INTEL 英特尔	INTEL
GT28F320C3T110	文件：384.02 Kbytes Page：59 Pages	3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：384.02 Kbytes 页数：59 Pages	INTEL 英特尔	INTEL
GT28F320C3T90	文件：384.02 Kbytes Page：59 Pages	3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：384.02 Kbytes 页数：59 Pages	INTEL 英特尔	INTEL

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技术参数

触点类型：
1A
线圈电压：
3~24V
线圈功率：
0.78W
外形尺寸：
30.1×15.7×23.3mm

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳诚思涵科技有限公司	GT230PS	Vek-onlin	19+	SOT-23	200000		询价
深圳市毅创腾电子科技有限公司	GT21L16S2Y-S	GENITOP		SOP8	1200	正品原装--自家现货-实单可谈	询价
深圳市一线半导体有限公司	GT28F008B3T-110	ERICSSON	24+	BGA	351		询价
上海意淼电子科技有限公司	GT25Q101	富士	23+	25A/1200V/1UIGBT单管	300	全新原装假一赔十	询价
深圳市鼎盛源芯科技有限公司	GT28F800B3T90	intel	16+	原厂封装	10000	全新原装正品,代理优势渠道供应,欢迎来电咨询	询价
深圳市正纳电子有限公司	GT25J101	TOSHIBA(东芝)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
中天科工半导体（深圳）有限公司	GT25Q102	TOSHIBA/东芝	专业铁帽	TO-3PL	67500	铁帽原装主营-可开原型号增税票	询价
深圳市睿芯铭科技有限公司	GT28F800B3T90	INTEL	46	BGA	3600	原装现货合理议价	询价
深圳市利加科技有限公司	GT28F320B3B	INTEL	16+	BGA	8000	原装现货请来电咨询	询价
深圳市艾宇欣科技有限公司	GT28F320B3TA110	Intel	1931+	N/A	493	加我qq或微信，了解更多详细信息,体验一站式购物	询价

更多GT2供应商更新时间2026-3-16 9:41:00

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