GT2技术资料参数市场行情英特尔3M第12页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
GT28F160C3B90	文件：384.02 Kbytes Page：59 Pages	3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：384.02 Kbytes 页数：59 Pages	INTEL 英特尔	INTEL
GT28F160C3BA110	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	INTEL 英特尔	INTEL
GT28F160C3BA70	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	INTEL 英特尔	INTEL
GT28F160C3BA90	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	INTEL 英特尔	INTEL
GT28F160C3BC70	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	INTEL 英特尔	INTEL
GT28F160C3BD70	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	INTEL 英特尔	INTEL
GT28F160C3T110	文件：384.02 Kbytes Page：59 Pages	3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：384.02 Kbytes 页数：59 Pages	INTEL 英特尔	INTEL
GT28F160C3T90	文件：384.02 Kbytes Page：59 Pages	3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：384.02 Kbytes 页数：59 Pages	INTEL 英特尔	INTEL
GT28F160C3TA110	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	INTEL 英特尔	INTEL
GT28F160C3TA70	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	INTEL 英特尔	INTEL

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技术参数

触点类型：
1A
线圈电压：
3~24V
线圈功率：
0.78W
外形尺寸：
30.1×15.7×23.3mm

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳诚思涵科技有限公司	GT230PS	Vek-onlin	19+	SOT-23	200000		询价
深圳市毅创腾电子科技有限公司	GT21L16S2Y-S	GENITOP		SOP8	1200	正品原装--自家现货-实单可谈	询价
深圳市弘为电子有限公司	GT28F160F3B95	INTEL	24+	BGA	6	原装现货假一罚十	询价
中天科工半导体（深圳）有限公司	GT25Q102	TOSHIBA/东芝	专业铁帽	TO-3PL	67500	铁帽原装主营-可开原型号增税票	询价
深圳市昊创电子有限公司	GT28F160B3BA-110	INTEL/英特尔	9951	FLASH-NOR/28F160/BOTTOMB	1250	原装香港现货真实库存。低价	询价
深圳市睿芯铭科技有限公司	GT28F800B3T90	INTEL	46	BGA	3600	原装现货合理议价	询价
千层芯半导体(深圳)有限公司	GT23L24T3Y	GENITOP	24+	17+	4	SOP20	询价
深圳市勤思达科技有限公司	GT25J101	TOS	1215+	TO-3P	150000	全新原装,绝对正品,公司大量现货供应.	询价
深圳市科雨电子有限公司	GT28F160C3TA110	INTEL	25+	BGA-48	3854	就找我吧!--邀您体验愉快问购元件!	询价
深圳市威尔健半导体有限公司	GT29LV800BV-70	N/A	23+	TSOP-48	50000	全新原装正品现货,支持订货	询价

更多GT2供应商更新时间2026-3-16 9:41:00

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