丝印：GSS；Package：SOT26；SINGLE CHIP SOLUTION FOR 1-CELL Li BATTERY PACK

文件：742.23 Kbytes 页数：18 Pages

DIODES

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P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GSS4913 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage application

文件：290.68 Kbytes 页数：4 Pages

GTM

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GSS4920 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage application

文件：309.25 Kbytes 页数：5 Pages

GTM

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GSS4924 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage application

文件：303.85 Kbytes 页数：5 Pages

GTM

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GSS4936 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Features * Simple Drive Requirement * Low Gate Charge * Fast Switching

文件：312.2 Kbytes 页数：5 Pages

GTM

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P-CHANNEL ENHANCEMENT MODE POWER MOSFET

[GTM] Description The GSS4953 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage appl

文件：309.87 Kbytes 页数：5 Pages

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P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GSS4953 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage application

文件：309.87 Kbytes 页数：5 Pages

GTM

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P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GSS4953BDY provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage appl

文件：309.11 Kbytes 页数：5 Pages

GTM

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P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GSS4955 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage application

文件：350.81 Kbytes 页数：4 Pages

GTM

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P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GSS4957 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Features * Low On-Resistance * Simple Drive Requirement * Dual P MOSFET Package

文件：318.18 Kbytes 页数：4 Pages

GTM

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