N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GSS4936 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Features * Simple Drive Requirement * Low Gate Charge * Fast Switching

文件：312.2 Kbytes 页数：5 Pages

GTM

勤益投资控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

勤益投资控股

5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET

This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very lo

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FAIRCHILD

仙童半导体

5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET

This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very lo

文件：84.3 Kbytes 页数：5 Pages

INTERSIL

The built-in maximum 1 A linear charging mode of charging current is adjustable

文件：1.15821 Mbytes 页数：7 Pages

HOTCHIPHotchip Technology Co.,Ltd

华芯邦深圳市华芯邦科技有限公司