Non contact Switches

文件：84.91 Kbytes 页数：4 Pages

ALLEN-BRADLEY

AC-DC Converter

文件：269.47 Kbytes 页数：2 Pages

YUANDEAN

元册

丝印：GS120R033；Package：TO-247-4；N-Channel Silicon Carbide (SiC) MOSFET

Description Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits inclu

文件：1.36234 Mbytes 页数：10 Pages

GOFORD

谷峰半导体

丝印：GS120R040；Package：TO-247-4；N-Channel Silicon Carbide (SiC) MOSFET

Description Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits inclu

文件：1.63215 Mbytes 页数：10 Pages

GOFORD

谷峰半导体

丝印：GS120R068；Package：TO-247-4；N-Channel Silicon Carbide (SiC) MOSFET

Description Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits inclu

文件：1.5296 Mbytes 页数：11 Pages

GOFORD

谷峰半导体

丝印：GS120R160；Package：TO-247-4；N-Channel Silicon Carbide (SiC) MOSFET

Description Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits inclu

文件：1.32048 Mbytes 页数：10 Pages

GOFORD

谷峰半导体

丝印：GS1AB；Package：DO-214AA；Surface Mount General Purpose Rectifier GS1AB Through GS1MB

FEATUR E S ● Low profile package ● Ideal for automated placement ● Glass passivated chip junction ● High forward surge capability ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：1.17976 Mbytes 页数：3 Pages

RFE

RFE international

丝印：GS1BB；Package：DO-214AA；Surface Mount General Purpose Rectifier GS1AB Through GS1MB

FEATUR E S ● Low profile package ● Ideal for automated placement ● Glass passivated chip junction ● High forward surge capability ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：1.17976 Mbytes 页数：3 Pages

RFE

RFE international

丝印：GS1DB；Package：DO-214AA；Surface Mount General Purpose Rectifier GS1AB Through GS1MB

FEATUR E S ● Low profile package ● Ideal for automated placement ● Glass passivated chip junction ● High forward surge capability ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：1.17976 Mbytes 页数：3 Pages

RFE

RFE international

丝印：GS1G；Package：SMAF-C；Surface Mount General Purpose Rectifier

Features  Glass passivated chip junction  Low forward voltage drop  Low leakage current  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

文件：343.66 Kbytes 页数：4 Pages

PANJIT

強茂