Airfast RF Power GaN Transistor

This RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 4300 MHz. Features • High terminal impedances for optimal broadband performance • Designed for low complexity linearization systems • Universal broadband driver • Optimiz

文件：209.47 Kbytes 页数：13 Pages

恩XP

Airfast RF Power GaN Transistor

This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 3800 MHz. Features • High terminal impedances for optimal broadband performance • Designed for low complexity linearization systems • Universal broadband driver •

文件：207.48 Kbytes 页数：13 Pages

恩XP

50MHz TO 1000MHz, 15W GaN WIDEBAND

Product Description The RFHA1000 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance

文件：906.52 Kbytes 页数：11 Pages

RFMD

威讯联合

Chip Monolithic Ceramic Capacitors

文件：4.34703 Mbytes 页数：221 Pages

MURATA

村田

Chip Monolithic Ceramic Capacitors

文件：4.34703 Mbytes 页数：221 Pages

MURATA

村田

capacitor data sheet

文件：346.42 Kbytes 页数：1 Pages

MURATA

村田

capacitor data sheet

文件：346.42 Kbytes 页数：1 Pages

MURATA

村田

capacitor data sheet

文件：346.42 Kbytes 页数：1 Pages

MURATA

村田

capacitor data sheet

文件：346.35 Kbytes 页数：1 Pages

MURATA

村田

capacitor data sheet

文件：346.35 Kbytes 页数：1 Pages

MURATA

村田