Airfast RF Power GaN Transistor

This RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 4300 MHz. Features • High terminal impedances for optimal broadband performance • Designed for low complexity analog or digital linearization systems • Universal broadband

文件：199.94 Kbytes 页数：13 Pages

恩XP

Airfast RF Power GaN Transistor

This RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 4300 MHz. Features • High terminal impedances for optimal broadband performance • Designed for low complexity linearization systems • Universal broadband driver • Optimiz

文件：209.47 Kbytes 页数：13 Pages

恩XP

Airfast RF Power GaN Transistor

This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 3800 MHz. Features • High terminal impedances for optimal broadband performance • Designed for low complexity linearization systems • Universal broadband driver •

文件：207.48 Kbytes 页数：13 Pages

恩XP

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

文件：1.27025 Mbytes 页数：20 Pages

freescaleFreescale Semiconductor, Inc

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