Broadband Linear Gain Block 0.05 to 8.0 GHz

Features Reference: 5V/90mA/1.9 GHz • Gain: 18.5 dB • OIP3: 38.5 dBm • OP1dB: 22.5 dBm • NF: 1.3 dB • Tested to AEC-Q100 Grade 2 • Flexible Biasing • Internally Matched to 50Ω • Process: GaAs pHEMT • Applications • Compensators • Small Cells and Cellular Repeaters • 802.11ac

文件：862.91 Kbytes 页数：15 Pages

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Broadband Linear Gain Block 0.05 to 3.8 GHz

Features Reference: 5.0V/150mA/900 MHz • Gain: 15.9 dB • OIP3: 43.5 dBm; • OP1dB: 24.0 dBm Reference: 8.0V/150mA/900 MHz • Gain: 15.9 dB • OIP3: 41.0 dBm; • OP1dB: 27.5 dBm • Flexible Bias Voltage and Current • Internally Matched to 50 Ω • Process: GaAs pHEMT Applications • Linear D

文件：925.31 Kbytes 页数：12 Pages

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Linear Gain Block with Bypass 0.15 to 6 GHz

FEATURES Flexible Bias Voltage and Current Process: GaAs pHEMT Single Control Logic Input Internally Matched to 50 Ω Compact 1.5 x 1.5 mm DFN-6 Package Reference: 5 V / 80 mA / 1.7 GHz Gain: 15.5 dB OP1dB: 22 dBm OIP3: 38 dBm Evaluation Board Noise Figure: 2.1 dB Bypass Mode Gain: -1.6

文件：1.8727 Mbytes 页数：23 Pages

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Linear Gain Block with Bypass 0.15 to 6 GHz

FEATURES Flexible Bias Voltage and Current Process: GaAs pHEMT Single Control Logic Input Internally Matched to 50 Ω Compact 1.5 x 1.5 mm DFN-6 Package Reference: 5 V / 80 mA / 1.9 GHz Gain: 18.5 dB OP1dB: 22 dBm OIP3: 36 dBm Evaluation Board Noise Figure: 1.8 dB Bypass Mode Gain: -1.5

文件：1.75757 Mbytes 页数：24 Pages

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Ultra-Low Noise Amplifier Tuning Range: 0.7 – 3.8 GHz

Features Reference: 5V/70mA/1.9 GHz • Gain: 19.0 dB • Eval Board NF: 0.37 dB • OP1dB: 21.0 dBm • OIP3: 36.0 dBm • Flexible Bias Voltage and Current • Process: GaAs pHEMT Applications • Cellular Infrastructure • Small Cells and Cellular Repeaters • Distributed Antenna Systems • High Per

文件：977.67 Kbytes 页数：13 Pages

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Ultra-Low Noise Amplifier Tuning Range: 1.7 – 4.5 GHz

Features Reference: 5V/70mA /2.5 GHz • Gain: 19.2 dB • Eval Board NF: 0.50 dB • OP1dB: 21.0 dBm • OIP3: 38.0 dBm • Flexible Bias Voltage and Current • Process: GaAs pHEMT Applications • Cellular Infrastructure • Small Cells and Cellular Repeaters • Distributed Antenna Systems

文件：1.036619 Mbytes 页数：14 Pages

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Ultra-Low Noise Amplifier 2 to 6 GHz

FEATURES Excellent NF Performance High Gain Outstanding Linearity Flexible Bias Voltage and Current Drop-in Compatibility with Legacy SDARS LNA Solutions Compact 2.0 x 2.0 mm DFN-8 Package Process: GaAs pHEMT AEC-Q100 Grade 2 Qual Reference: 5 V / 2.3325 GHz / 70 mA Gain: 20.5 dB OIP3:

文件：1.55553 Mbytes 页数：24 Pages

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Ultra-Low Noise Amplifier 1 to 6 GHz

FEATURES Flexible Bias Voltage and Current Process: GaAs pHEMT Compact 2.0 x 2.0 mm DFN-8 Package Reference: 5 V / 2332.5 MHz / 60 mA Gain: 20.5 dB OIP3: 35.5 dBm OP1dB: 17.5 dBm Evaluation Board Noise Figure: 0.35 dB Tested to AEC-Q100 Grade 2 100 Device Reflow at Assembly 100 Optical

文件：1.26915 Mbytes 页数：17 Pages

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Ultra-Low Noise Amplifier Tuning Range: 1.0 to 6.0 GHz

Features Reference: 5V/55mA/2332.5 MHz • EVB NF: 0.37dB • Gain: 22.0 dB • OP1dB: 19.0 dBm • OIP3: 35.5 dBm • Tested to AEC-Q100 Grade 2 • 100 Device Reflow at Assembly • 100 Optical Die Inspection • Flexible Bias Voltage and Current • Process: GaAs pHEMT Applications • SDARS LNA • Cel

文件：878.19 Kbytes 页数：15 Pages

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LOW-CURRENT LNA 0.1 to 3.8 GHz

FEATURES Flexible Bias Voltage and Current Internally Matched to 50 Ω Process: GaAs pHEMT Compact 1.5 x 1.5 mm DFN-6 Package Reference: 3.3 V / 15 mA / 2.5 GHz Gain: 16.5 dB OIP3: 19 dBm OP1dB: 10 dBm Evaluation Board Noise Figure: 0.8 dB Tested to AEC-Q100 Grade 2 100 Device Reflow at

文件：1.23834 Mbytes 页数：17 Pages

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