Linear Gain Block with Bypass 0.15 to 6 GHz

FEATURES Flexible Bias Voltage and Current Process: GaAs pHEMT Single Control Logic Input Internally Matched to 50 Ω Compact 1.5 x 1.5 mm DFN-6 Package Reference: 5 V / 80 mA / 1.9 GHz Gain: 18.5 dB OP1dB: 22 dBm OIP3: 36 dBm Evaluation Board Noise Figure: 1.8 dB Bypass Mode Gain: -1.5

文件：1.75757 Mbytes 页数：24 Pages

GUERRILLA

Broadband LNAs

Reference: 5V/80mA/1.9GHz\n• Gain: 18.4 dB\n• EVB NF: 1.6 dB\n• OIP3: 37.0 dBm\n• OP1dB: 22.0 dBm\n• Bypass Mode Gain: -1.5 dB\n• Bypass OP1dB: 25.0 dBm\n• Bypass OIP3: 46.0 dBm\n• Single Control Logic Input\n• Flexible Bias Voltage and Current\n• Internally Matched to 50 Ω\n• Process: GaAs pHEMT;

Guerrilla RF

Silicon N Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting

文件：55.61 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting

文件：55.61 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting

文件：95.38 Kbytes 页数：8 Pages

RENESAS

瑞萨