Ultra-Low Noise Amplifier 2 to 6 GHz

FEATURES Excellent NF Performance High Gain Outstanding Linearity Flexible Bias Voltage and Current Drop-in Compatibility with Legacy SDARS LNA Solutions Compact 2.0 x 2.0 mm DFN-8 Package Process: GaAs pHEMT AEC-Q100 Grade 2 Qual Reference: 5 V / 2.3325 GHz / 70 mA Gain: 20.5 dB OIP3:

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NPN SILICON TRANSISTOR

APPLICATIONS TV Vertical Deflection Output .

文件：149.04 Kbytes 页数：2 Pages

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Trench gate Field-Stop IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.0V@IC=75A · High Speed Switching · Low Power Loss APPLICATIONS · Industrial Power Supplies · Industrial Drives · Solar Inverters

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ISC

无锡固电