AB类双通道输出

GC2822Z用于便携式录音机和收音机作音频功率放大器。\n\n采用DIP8封装形式。

GCORE

扬州国芯

包装：卷带（TR） 类别：晶体，振荡器，谐振器 晶体 描述：CRYSTAL 28.2240MHZ 12PF

DIODES

美台半导体

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

文件：142.3 Kbytes 页数：11 Pages

MOTOROLA

摩托罗拉

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

文件：142.3 Kbytes 页数：11 Pages

MOTOROLA

摩托罗拉

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

文件：142.3 Kbytes 页数：11 Pages

MOTOROLA

摩托罗拉