丝印：GB095NE4SL；Package：TO-263；45V N-Ch Power MOSFET

Feature ◇High Speed Power Switching, Logic Level ◇Enhanced Body diode dv/dtcapability ◇EnhancedAvalanche Ruggedness ◇100% UIS Tested, 100% Rg Tested ◇Lead Free, HalogenFree Application ◇Synchronous Rectification in SMPS ◇Hard Switching and High Speed Circuit ◇DC/DCin Tel

文件：848.52 Kbytes 页数：6 Pages

HUNTECK

恒泰柯半导体

丝印：GB095NE4SL；Package：TO-263；45V N-Ch Power MOSFET

Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in T

文件：848.52 Kbytes 页数：6 Pages

HUNTECK

恒泰柯半导体