Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A

FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolate package (2500 VAC/RMS) • Very low internal inductance (≤ 5 nH typical) • Industry standard o

文件：153.03 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IGBT

DESCRIPTION · Low VCE(sat) for minimum on-stateconduction losses · Very high current, fast switchingIGBT · MOS Gate turn-on drive simplicity APPLICATIONS · AC motor speed control · DC servo and robot drives · Uninterruptible power supplies (UPS)

文件：562.22 Kbytes 页数：3 Pages

ISC

无锡固电

HALF-BRIDGE IGBT DOUBLE INT-A-PAK

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL approved • Generation 4 IGBT technology B

文件：299.66 Kbytes 页数：10 Pages

IRF

HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT

HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Very low conduction and switching losses • HEXFRED™antiparallel diodes with ultra-soft recovery • Industry stan

文件：303.56 Kbytes 页数：10 Pages

IRF

Half-Bridge IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A

Half-Bridge IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED® antiparallel diodes with ul

文件：239.87 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Ultra-FastTM Speed IGBT

HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Very low conduction and switching losses • HEXFREDTM antiparallel diodes with ul

文件：205.52 Kbytes 页数：9 Pages

IRF

SCRs Nanosecond Switching, Planar

DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs. FEATURES ● Rise Time : 10ns ● Delay Time : 10ns ● Recovery Time : 0.5μS ● Pulse Current : to 100A ● Turn-on with 20ns, 10mA Gate Pulse

文件：140.15 Kbytes 页数：3 Pages

MICROSEMI

美高森美

SCRs Nanosecond Switching, Planar

DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs. FEATURES ● Rise Time : 10ns ● Delay Time : 10ns ● Recovery Time : 0.5μS ● Pulse Current : to 100A ● Turn-on with 20ns, 10mA Gate Pulse

文件：140.15 Kbytes 页数：3 Pages

MICROSEMI

美高森美

SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR

文件：173.42 Kbytes 页数：4 Pages

DIGITRON

SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR

文件：173.42 Kbytes 页数：4 Pages

DIGITRON