SCRs Nanosecond Switching, Planar

DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs. FEATURES ● Rise Time : 10ns ● Delay Time : 10ns ● Recovery Time : 0.5μS ● Pulse Current : to 100A ● Turn-on with 20ns, 10mA Gate Pulse

文件：140.15 Kbytes 页数：3 Pages

MICROSEMI

美高森美

SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR

文件：173.42 Kbytes 页数：4 Pages

DIGITRON

SCRs Nanosecond Switching, Planar

DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs. FEATURES ● Rise Time : 10ns ● Delay Time : 10ns ● Recovery Time : 0.5μS ● Pulse Current : to 100A ● Turn-on with 20ns, 10mA Gate Pulse

文件：140.15 Kbytes 页数：3 Pages

MICROSEMI

美高森美

HALF-BRIDGE IGBT INT-A-PAK

Features • Generation 4 IGBT Technology • Standard speed: optimized for hard switching operating frequencies up to 1000 Hz • Very Low Conduction Losses • Industry standard package Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimi

文件：101.73 Kbytes 页数：6 Pages

IRF

HALF-BRIDGE IGBT INT-A-PAK Standard Speed IGBT

Features • Generation 4 IGBT Technology • Standard speed: optimized for hard switching operating frequencies up to 1000 Hz • Very Low Conduction Losses • Industry standard package Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimi

文件：67.2 Kbytes 页数：6 Pages

IRF

Half-Bridge IGBT INT-A-PAK (Standard Speed IGBT), 200 A

FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Very low conduction losses • Industry standard package • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level BENEFITS • Increased

文件：128.53 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Side Switch Chopper Module Ultra-Fast Speed IGBT

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL approved • Generation 4 IGBT technology B

文件：164.91 Kbytes 页数：9 Pages

IRF

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

Insulated Gate Bipolar Transistor Ultralow VCERevision: 22-Jul-10 (on), 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC) • Very low internal inductance (5 nH typi

文件：182.52 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR Features • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package ( 2,500 volt AC) • Very low internal inductance ( 5 nH typ.) • Industry standa

文件：201.54 Kbytes 页数：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR Features • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package ( 2,500 volt AC) • Very low internal inductance ( 5 nH typ.) • Industry standa

文件：322.87 Kbytes 页数：9 Pages

IRF