GA200TS60UX

Ultra-FastTM Speed IGBT

HALF-BRIDGEIGBTINT-A-PAK Ultra-FastSpeedIGBT Features •Generation4IGBTtechnology •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Verylowconductionandswitchinglosses •HEXFREDTMantiparalleldiodeswithul

GA200TS60UX

Ultra-FastTM Speed IGBT;

GA200TS60U

HALF-BRIDGEIGBTINT-A-PAKUltra-FastSpeedIGBT

HALF-BRIDGEIGBTINT-A-PAK Ultra-FastSpeedIGBT Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Verylowconductionandswitchinglosses •HEXFRED™antiparalleldiodeswithultra-softrecovery •Industrystan

GA200TS60UPBF

Half-BridgeIGBTINT-A-PAK(UltrafastSpeedIGBT),200A

Half-BridgeIGBTINT-A-PAK(UltrafastSpeedIGBT),200A FEATURES •Generation4IGBTtechnology •Ultrafast:Optimizedforhighspeed8kHzto40kHzinhardswitching,>200kHzinresonant mode •Verylowconductionandswitchinglosses •HEXFRED®antiparalleldiodeswithul

GB200TS60NPBF

INT-A-PAKHalf-Bridge(UltrafastSpeedIGBT),209A

FEATURES •Generation5NonPunchThrough(NPT)technology •Ultrafast:Optimizedforhardswitchingspeed8kHzto60kHz •LowVCE(on) •10μsshortcircuitcapability •SquareRBSOA •PositiveVCE(on)temperaturecoefficient •HEXFRED®antiparalleldiodewithultrasoftreverserecoveryc

VS-GB200TS60NPBF

Ultrafast:optimizedforhardswitchingspeed