Ultra-FastTM Speed IGBT

HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Very low conduction and switching losses • HEXFREDTM antiparallel diodes with ul

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IRF

Ultra-FastTM Speed IGBT

Infineon

英飞凌

INT-A-PAK Half-Bridge (Ultrafast Speed IGBT), 209 A

FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 μs short circuit capability • Square RBSOA • Positive VCE(on) temperature coefficient • HEXFRED® antiparallel diode with ultrasoft reverse recovery c

文件：202.59 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

Ultrafast: optimized for hard switching speed

文件：204.3 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司