Half-Bridge IGBT INT-A-PAK (Standard Speed IGBT), 200 A

FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Very low conduction losses • Industry standard package • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level BENEFITS • Increased

文件：128.53 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Side Switch Chopper Module Ultra-Fast Speed IGBT

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL approved • Generation 4 IGBT technology B

文件：164.91 Kbytes 页数：9 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR Features • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package ( 2,500 volt AC) • Very low internal inductance ( 5 nH typ.) • Industry standa

文件：201.54 Kbytes 页数：8 Pages

IRF

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

Insulated Gate Bipolar Transistor Ultralow VCERevision: 22-Jul-10 (on), 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC) • Very low internal inductance (5 nH typi

文件：182.52 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR Features • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package ( 2,500 volt AC) • Very low internal inductance ( 5 nH typ.) • Industry standa

文件：322.87 Kbytes 页数：9 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR Features • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package ( 2,500 volt AC) • Very low internal inductance ( 5 nH typ.) • Industry standa

文件：322.87 Kbytes 页数：9 Pages

IRF

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

Insulated Gate Bipolar Transistor Ultralow VCERevision: 22-Jul-10 (on), 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC) • Very low internal inductance (5 nH typi

文件：182.52 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC) • Very low internal inductance (5 nH typical) • Industry standard outline • UL approved file E78996 • Compliant to RoHS directive

文件：181.36 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC) • Very low internal inductance (5 nH typical) • Industry standard outline • UL approved file E78996 • Compliant to RoHS directive

文件：181.36 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

INSULATED GATE BIPOLAR TRANSISTOR

Features • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolate package ( 2,500 Volt AC/RMS) • Very low internal inductance ( ≤ 5 nH typ.) •

文件：197.24 Kbytes 页数：8 Pages

IRF