INSULATED GATE BIPOLAR TRANSISTOR

Features • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolate package ( 2,500 Volt AC/RMS) • Very low internal inductance ( ≤ 5 nH typ.) •

文件：197.24 Kbytes 页数：8 Pages

IRF

IGBT

DESCRIPTION · Low VCE(sat) for minimum on-stateconduction losses · Very high current, fast switchingIGBT · MOS Gate turn-on drive simplicity APPLICATIONS · AC motor speed control · DC servo and robot drives · Uninterruptible power supplies (UPS)

文件：562.22 Kbytes 页数：3 Pages

ISC

无锡固电

Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A

FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolate package (2500 VAC/RMS) • Very low internal inductance (≤ 5 nH typical) • Industry standard o

文件：153.03 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IGBT UFAST 600V 100A SOT227

Vishay

威世

INSULATED GATE BIPOLAR TRANSISTOR

Infineon

英飞凌

Package：SOT-227-4，miniBLOC；包装：托盘 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：IGBT MOD 600V 200A 500W SOT227B

Vishay General Semiconductor - Diodes Division

Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A

Vishay

威世