NTP60N06

N-Channel60-V(D-S)MOSFET

NTP60N06

60V,60A,N-ChannelTO-220andD2PAK

NTP60N06G

60V,60A,N-ChannelTO-220andD2PAK

NTP60N06G

N-Channel60-V(D-S)MOSFET

NTP60N06L

PowerMOSFET60Amps,60Volts,LogicLevelN?묬hannelTO??20andD2PAK

NTP60N06LG

PowerMOSFET60Amps,60Volts,LogicLevelN?묬hannelTO??20andD2PAK

NVB60N06

MOSFET–Power,N-Channel,D2PAK60V,60A

Designedforlowvoltage,highspeedswitchingapplicationsin powersupplies,convertersandpowermotorcontrolsandbridge circuits. Features •AEC−Q101QualifiedandPPAPCapable−NVB60N06 •TheseDevicesarePb−FreeandareRoHSCompliant TypicalApplications •PowerSupplies •C

OM60N06SA

LOWVOLTAGE,LOWRDS(on)POWERMOSFETSINHERMETICISOLATEDPACKAGE

DESCRIPTION ThisseriesofhermeticpackagedMOSFETsareideallysuitedforlowvoltageapplications;batterypoweredvoltagepowersupplies,motorcontrols,dctodcconvertersandsynchronousrectification.Thelowconductionlossallowssmallerheatsinkingandthelowgatechargesimplerdr

P60N06

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

■TYPICALRDS(on)=0.0172 ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■VERYLOWRDS(on) ■APPLICATIONORIENTED CHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEE

PHB60N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP60N06LTissu