Trench gate field-stop 650 V, 60 A high speed HB series IGBT

Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

文件：689.96 Kbytes 页数：21 Pages

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丝印：G60H65DFB；Package：TO247-4；Trench gate field-stop 650 V, 60 A high speed HB series IGBT

Features • Maximum junction temperature: TJ = 175 °C • Excellent switching performance thanks to the extra driving kelvin pin • Low VCE(sat) = 1.6 V (typ.) @ IC = 60 A • Minimized tail current • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recov

文件：556.1 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：G60H65DFB；Package：TO-247；Trench gate field-stop 650 V, 60 A high speed HB series IGBT

Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

文件：689.96 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

60 A, 650 V field stop trench gate IGBT with very fast diode

文件：1.92588 Mbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

Low thermal resistance

文件：1.57984 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop 650 V, 60 A high speed HB series IGBT

Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

文件：689.96 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体