60 A, 650 V field stop trench gate IGBT with very fast diode

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丝印：GW60H65DFB；Package：TO-247；Trench gate field-stop 650 V, 60 A high speed HB series IGBT

Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

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Trench gate field-stop 650 V, 60 A high speed HB series IGBT

Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

文件：689.96 Kbytes 页数：21 Pages

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丝印：G60H65DFB；Package：TO247-4；Trench gate field-stop 650 V, 60 A high speed HB series IGBT

Features • Maximum junction temperature: TJ = 175 °C • Excellent switching performance thanks to the extra driving kelvin pin • Low VCE(sat) = 1.6 V (typ.) @ IC = 60 A • Minimized tail current • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recov

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Low thermal resistance

文件：1.57984 Mbytes 页数：19 Pages

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60 A, 650 V field stop trench gate IGBT with very fast diode

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature • High speed switching\n• Tight parameters distribution\n• Safe paralleling\n• Low thermal resistance• 6 μs short-circuit withstand time\n• Very fast soft recovery antiparallel diode\n• Lead free package;

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Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 650V 120A 360W TO247

STMICROELECTRONICS

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650 V、60 A高速沟槽栅场截止HB系列IGBT

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the • Maximum junction temperature: TJ = 175 °C \n• High speed switching series \n• Minimized tail current \n• Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A \n• Tight parameter distribution \n• Safe paralleling \n• Positive VCE(sat) temperature coefficient \n• Low thermal resistance \n• Ve;

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意法半导体

Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. A faster switching ev • Maximum junction temperature: TJ = 175 °C\n• Kelvin pin\n• Low VCE(sat) = 1.6 V (typ.) @ IC = 60 A\n• Minimized tail current• Tight parameter distribution\n• Safe paralleling\n• Low thermal resistance\n• Very fast soft recovery antiparallel diode;

ST

意法半导体

Package：TO-247-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 650V 80A 375W TO-247

STMICROELECTRONICS

意法半导体