STGW60H65DFB_V01中文资料意法半导体数据手册PDF规格书

厂商型号	STGW60H65DFB_V01
功能描述	Trench gate field-stop 650 V, 60 A high speed HB series IGBT
文件大小	689.96 Kbytes
页面数量	21 页
生产厂商	STMicroelectronics
企业简称	STMICROELECTRONICS【意法半导体】
中文名称	意法半导体集团官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-23 23:06:00
人工找货	STGW60H65DFB_V01价格和库存，欢迎联系客服免费人工找货

Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop

structure. These devices are part of the new HB series of IGBTs, which

represent an optimum compromise between conduction and switching loss to

maximize the efficiency of any frequency converter. Furthermore, the slightly positive

VCE(sat) temperature coefficient and very tight parameter distribution result in safer

paralleling operation.

Features

• Maximum junction temperature: TJ = 175 °C

• High speed switching series

• Minimized tail current

• Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A

• Tight parameter distribution

• Safe paralleling

• Positive VCE(sat) temperature coefficient

• Low thermal resistance

• Very fast soft recovery antiparallel diode

Applications

• Photovoltaic inverters

• High-frequency converters