Power Distribution Switch

文件：179.74 Kbytes 页数：1 Pages

GMT

致新科技

Single Power Switch

GMT

致新科技

Charge-Pumps and High-Current OP

文件：558.53 Kbytes 页数：1 Pages

GMT

致新科技

RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the VHF frequency range. • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB Efficiency 60 (Typ) • Cost Effective PowerMacro Packag

文件：94.19 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Schottky Barrier Diode

Description: The NTE553 is a silicon schottky barrier diode in a DO35 style package for use in UHF and VHF switching applications. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

文件：17.07 Kbytes 页数：1 Pages

NTE

Two Channel Direct Drive Speech Controller?

INTRODUCTION SNC553 is a two-channel voice synthesizer IC with PWM direct drive circuit. It built-in a 4-bit tiny controller with one 4-bit input port and two 4-bit I/O ports. By programming through the tiny controller in SNC553, user’s varied applications including voice section combination, key

文件：424.95 Kbytes 页数：12 Pages

SONIX

松翰科技