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G2K6P25K

丝印:G2K6P25;Package:TO-252;P-Channel Enhancement Mode Power MOSFET

Description The G2K6P25K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件:626.61 Kbytes 页数:6 Pages

GOFORD

谷峰半导体

G2K6P25T

丝印:G2K6P25;Package:TO-220;P-Channel Enhancement Mode Power MOSFET

Description The G2K6P25T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件:976.34 Kbytes 页数:6 Pages

GOFORD

谷峰半导体

G2K6P25TA

丝印:G2K6P25;Package:TO-220;P-Channel Enhancement Mode Power MOSFET

Description The G2K6P25TA uses advanced trench technology to provid e excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch lDC/DC converters

文件:1.24652 Mbytes 页数:6 Pages

GOFORD

谷峰半导体

G2K8P15K

丝印:G2K8P15;Package:TO-252;P-Channel Enhancement Mode Power MOSFET

Description The G2K8P15K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件:606.06 Kbytes 页数:6 Pages

GOFORD

谷峰半导体

G2K8P15S

丝印:G2K8P15;Package:SOP-8;P-Channel Enhancement Mode Power MOSFET

Description The G2K8P15S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件:1.06869 Mbytes 页数:6 Pages

GOFORD

谷峰半导体

G2KF

丝印:G2KF;Package:SMAF;Surface Mount Tension Resolution G2AF Through G2MF

FEATURES ● Low profile package ● Ideal for automated placement ● Glass passivated chip junction ● High forward surge capability ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件:1.55975 Mbytes 页数:3 Pages

RFE

RFE international

G2K60-240

PURE-SINEWAVE DC-AC INVERTERS

文件:499.62 Kbytes 页数:2 Pages

NOVA

G2K2P10S2E

-100V P+P Channel TRENCH MOSFET

GOFORD

谷峰半导体

G2K3N10G

100V N Channel TRENCH MOSFET

GOFORD

谷峰半导体

G2K3N10H

100V N Channel TRENCH MOSFET

GOFORD

谷峰半导体

技术参数

  • Configuration:

    P channel

  • ESD:

    YES

  • VDS:

    -100V

  • Id at 25℃(max):

    -10A

  • PD(max):

    31W

  • Vgs(th)typ(V):

    -1.6V

  • RDS(on)(typ)(@10V):

    175mΩ

  • RDS(on)(typ)(@4.5V):

    188mΩ

  • Qg(nC):

    33

  • Ciss:

    1668

  • Crss:

    44

供应商型号品牌批号封装库存备注价格
GIC
24+
QFP
230
询价
OMRON/欧姆龙
23+
DIP
50000
全新原装正品现货,支持订货
询价
OMRON/欧姆龙
23+
NEW
21500
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
欧姆龙
2023+环保现货
专业继电器
6800
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
YANGJIE
24+
SMAF
50000
原厂直销全新原装正品现货 欢迎选购
询价
GIC
2023+
QFP
50000
原装现货
询价
24+
N/A
67000
一级代理-主营优势-实惠价格-不悔选择
询价
谷峰
两年内
NA
1067
实单价格可谈
询价
OMRON/欧姆龙
25+
DIP
49
原装正品,假一罚十!
询价
NK/南科功率
2025+
TO-252-2
986966
国产
询价
更多G2K供应商 更新时间2026-1-19 16:30:00