Silicon Z?밆iodes

FEATURES • High reliability • Voltage range 10 V to 270 V Fits onto 5 mm SMD footpads • Wave and reflow solderable • Glass passivated junction

文件：1.98202 Mbytes 页数：3 Pages

TAYCHIPST

泰迪斯电子

丝印：G100；Package：DO-214AC；Zener Diodes

文件：1.54174 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

微型断路器

CO

京人

丝印：G100；Package：Micro8；Current-Shunt Monitors, 40 V Common Mode, Unidirectional, Single, Dual, Quad

文件：873.15 Kbytes 页数：16 Pages

ONSEMI

安森美半导体

丝印：G100；Package：Micro8；Current-Shunt Monitors, 40 V Common Mode, Unidirectional, Single, Dual, Quad

文件：873.15 Kbytes 页数：16 Pages

ONSEMI

安森美半导体

丝印：G1002；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The G1002 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：901.43 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G1002；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The G1002A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.11734 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G1002L；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description The G1002L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：888.83 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G1003A；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description The G1003A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：891.59 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G1003A；Package：SOT23-3L；N-Channel Enhancement MOSFET

Description The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features High density cell design for ultra low Rdson Fully characterized avalanche volta

文件：745.97 Kbytes 页数：6 Pages

YFWDIODE

佑风微