TRANSISTOR (NPN)

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TRANSISTOR:Genreal Purpuse

First Silicon

CONTROL DEVICES 60 Volt Abrupt Junction Tuning Varactors

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MICROSEMI

美高森美

Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A??

Description Specifically designed for Automotive applications, this HEXFET® power MOSFET has a 200°C max operating temperature with a Stripe Planar design that utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET®

文件：102.09 Kbytes 页数：8 Pages

IRF

Ultra-low-power transceiver solutions for mobile and portable applications

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