CONTROL DEVICES 60 Volt Abrupt Junction Tuning Varactors

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Microsemi

美高森美

Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A??

Description Specifically designed for Automotive applications, this HEXFET® power MOSFET has a 200°C max operating temperature with a Stripe Planar design that utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET®

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IRF

Ultra-low-power transceiver solutions for mobile and portable applications

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etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

EPITAXIAL PLANAR PNP TRANSISTOR (AUDIO FREQUENCY POWER,HIGH FREQUENCY POWER)

AUDIO FREQUENCY POWER AMPLIFIER HIGH FREQUENCY POWER AMPLIFIER FEATURES • Complementary to KTC2803

文件：298.93 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)