20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness r

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INTERSIL

20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs

Renesas

瑞萨

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A • Monolithic Construction wit

文件：24.81 Kbytes 页数：2 Pages

NTE

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

文件：55.13 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

LinCMOSE QUAD OPERATIONAL AMPLIFIERS

文件：315.34 Kbytes 页数：21 Pages

TI

德州仪器