17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness r

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INTERSIL

17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs

Renesas

瑞萨

Square Type

文件：31.86 Kbytes 页数：1 Pages

PANASONIC

松下

ULTRAFAST RECTIFIERS 4.0 AMPERES 200-600 VOLTS

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MOTOROLA

摩托罗拉

Silicon P-Channel JFET Transistor AF Amp

Absolute Maximum Ratings: Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Gate Current, IG . . . . . . .

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NTE