8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutro

文件：47.95 Kbytes 页数：6 Pages

INTERSIL

8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs

Renesas

瑞萨

HIGH POWER GENERAL USE INSULATED TYPE

• IT (AV) Average on-state current 130A • VRRM Repetitive peak reverse voltage 1200/1600V • VDRM Repetitive peak off-state voltage 1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION

文件：59.18 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

HIGH POWER GENERAL USE INSULATED TYPE

• IT (AV) Average on-state current 130A • VRRM Repetitive peak reverse voltage 400/800V • VDRM Repetitive peak off-state voltage 400/800V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 AP

文件：66.62 Kbytes 页数：5 Pages

MITSUBISHI

三菱电机

HIGH POWER GENERAL USE INSULATED TYPE

• IT (AV) Average on-state current 130A • IF (AV) Average forward current 130A • VRRM Repetitive peak reverse voltage 400/800V • VDRM Repetitive peak off-state voltage 400/800V • MIX DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E802

文件：70.7 Kbytes 页数：5 Pages

MITSUBISHI

三菱电机