34A, 250V, 0.120 Ohm, Rad Hard, N-Channel Power MOSFETs

Description Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness rangi

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INTERSIL

34A, 250V, 0.120 Ohm, Rad Hard, N-Channel Power MOSFETs

Renesas

瑞萨

Military DC-DC Converters 50 to 100W

Military DC-DC Converters 50 to 100W Features Inputs: 28Vdc per MIL-STD-704D/E 155Vdc per MIL-STD-1399A 270Vdc per MIL-STD-704D/E Single output: 2 – 48Vdc Up to 23W/in3 MIL-STD-810 environments Up to 90 efficiency Remote sense Current limit OVP a

文件：86.89 Kbytes 页数：2 Pages

VICOR

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2500 Typ (NTE263) = 3500 T

文件：24.89 Kbytes 页数：2 Pages

NTE

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

文件：55.13 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体