26A, -200V, 0.200 Ohm, Rad Hard, P-Channel Power MOSFETs

Description The Intersil Corporation Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with

文件：47.97 Kbytes 页数：6 Pages

INTERSIL

26A, -200V, 0.200 Ohm, Rad Hard, P-Channel Power MOSFETs

Renesas

瑞萨

ELECTRONIC VOLUME

文件：350.31 Kbytes 页数：10 Pages

TOSHIBA

东芝

ELECTRONIC VOLUME

文件：350.31 Kbytes 页数：10 Pages

TOSHIBA

东芝

ELECTRONIC VOLUME

文件：350.31 Kbytes 页数：10 Pages

TOSHIBA

东芝