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FQA47P06

60VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQAF47P06

60VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB47P06

60VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB47P06

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-47A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=26mΩ(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQI47P06

60VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP47P06

60VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP47P06

-60VP-ChannelMOSFET

Features ID=-47A VDS(V)=-60V RDS(on)=26m(VGS=-10V) LowGateCharge(Typ.84nC) LowCrss(Typ.320pF) 100AvalancheTested 175°CMaximumJunctionTemperatureRating

UMWUMW

友台友台半导体

FQPF47P06

60VP-ChannelMOSFET

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF47P06

P-ChannelQFET짰MOSFET-60V,-30A,26m廓

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF47P06YDTU

P-ChannelQFET짰MOSFET-60V,-30A,26m廓

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

KSM47P06

60VP-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMB47P06

Greendeviceavailable.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF47P06

60VP-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

ST47P06D

PChannelEnhancementModeMOSFET

STANSONStanson Technology

Stanson 科技

供应商型号品牌批号封装库存备注价格
UMW(友台半导体)
1年内
TO-220
150000
友台代理商 共奕芯城一站式元器件采购平台 自助下单 w
询价
23+
N/A
59000
一级代理放心采购
询价
UMW/广东友台半导体
2410+
TO-220
9000
十年芯路!只做原装!一直起卖!
询价
INFINEON
23+
TO-220
8000
只做原装现货
询价
Fairchild仙童
23+
TO-TO-220
12300
全新原装真实库存含13点增值税票!
询价
FAIRCHILD仙童
23+
TO-220
10000
公司只做原装正品
询价
Fairchild/ON
22+
TO2203
9000
原厂渠道,现货配单
询价
ON Semiconductor
2022+
TO-220-3
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
Fairchild
23+
33500
询价
Fairchild仙童
22+
TO-220
25000
只做原装进口现货,专注配单
询价
更多FQP47P06(UMW)供应商 更新时间2024-6-1 9:08:00