HFP3N80

800VN-ChannelMOSFET

HFS3N80

800VN-ChannelMOSFET

HFU3N80

800VN-ChannelMOSFET

HM3N80

SiliconN-ChannelPowerMOSFET

ISC3N80F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.0A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5.0Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

IXFA3N80

HiPerFETPowerMOSFETs

Features ●Internationalstandardpackage ●LowRDS(on) ●RatedforunclampedInductiveload Switching(UIS) Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXFA3N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.6A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

IXFP3N80

HiPerFETPowerMOSFETs

Features ●Internationalstandardpackage ●LowRDS(on) ●RatedforunclampedInductiveload Switching(UIS) Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXFP3N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.6A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..

KF3N80D

NCHANNELMOSFIELD

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES •VDSS=800V,ID=2.7A •Drain-S