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KF3N80D

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES •VDSS=800V,ID=2.7A •Drain-S

KECKEC CORPORATION

KEC株式会社

KF3N80D/I

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES •VDSS=800V,ID=2.7A •Drain-S

KECKEC CORPORATION

KEC株式会社

KF3N80DI

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES •VDSS=800V,ID=2.7A •Drain-S

KECKEC CORPORATION

KEC株式会社

KF3N80DSLASHI

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES •VDSS=800V,ID=2.7A •Drain-S

KECKEC CORPORATION

KEC株式会社

KF3N80F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES •VDSS=800V,ID

KECKEC CORPORATION

KEC株式会社

KF3N80F

PowerMOSFET

FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •IsolatedCentralMountingHole •FastSwitching •EaseofParalleling •SimpleDriveRequirements •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

KF3N80I

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES •VDSS=800V,ID=2.7A •Drain-S

KECKEC CORPORATION

KEC株式会社

KSM3N80

800VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMB3N80

Greendeviceavailable.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF3N80

800VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

详细参数

  • 型号:

    FQP3N80C

  • 功能描述:

    MOSFET 800V N-Ch Q-FET advance C-Series

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
onsemi
24+
TO-220-3
30000
晶体管-分立半导体产品-原装正品
询价
FAIRCHILD/仙童
24+
TO-220-3
3580
原装现货/15年行业经验欢迎询价
询价
FAIRCHILD/仙童
24+
TO-220
45
只做原厂渠道 可追溯货源
询价
FAIRCHILD/仙童
21+
TO-220
6850
只做原装正品假一赔十!正规渠道订货!
询价
仙童
24+
NA
6800
询价
onsemi(安森美)
24+
TO-220
8498
支持大陆交货,美金交易。原装现货库存。
询价
FAIRCHILD/仙童
2410+
TO-220
80000
原装正品.假一赔百.正规渠道.原厂追溯.
询价
ON/安森美
19+
SSOP16
1320
正规渠道原装正品
询价
ON/安森美
24+
TO-220-3
4442
全新原装正品现货可开票
询价
仙童
06+
TO-220
5000
原装库存
询价
更多FQP3N80C供应商 更新时间2025-5-29 14:14:00