isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.0Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：323.52 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFET Power MOSFETs

Features ● International standard package ● Low RDS(on) ● Rated for unclamped Inductive load Switching (UIS) Advantages ● Easy to mount ● Space savings ● High power density

文件：100.19 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 3.6A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：333.37 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFET Power MOSFETs

Features ● International standard package ● Low RDS(on) ● Rated for unclamped Inductive load Switching (UIS) Advantages ● Easy to mount ● Space savings ● High power density

文件：100.19 Kbytes 页数：2 Pages

IXYS

艾赛斯