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FQD7N60SE

650V N-Channel沟道

KTP

科泰普

KTP

MGP7N60E

Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on)

文件:122.09 Kbytes 页数:6 Pages

MOTOROLA

摩托罗拉

MGP7N60E

Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on)

文件:118.14 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

MGP7N60ED

Insulated Gate Bipolar Transistor withr Anti-Parallel Diode

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both

文件:144.18 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

技术参数

  • 漏源电压(Vdss):

    650V

  • 连续漏极电流(Id):

    7A

  • 导通电阻(RDS(on)):

    1.35Ω@10V

  • 耗散功率(Pd):

    50W

  • 阈值电压(Vgs(th)):

    4V

  • 栅极电荷量(Qg):

    38nC@10V

  • 输入电容(Ciss):

    1000pF@25V

  • 反向传输电容(Crss):

    2.4pF@25V

  • 工作温度:

    -55℃~+150℃

  • 类型:

    N沟道

  • 输出电容(Coss):

    95pF@25V

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
TO-252
22+
6000
十年配单,只做原装
询价
FAIR
23+
TO252
50000
全新原装正品现货,支持订货
询价
FAIR
2015+
TO252
355
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
FAIRCHILD
2015+
TO252
376
全新 发货1-2天
询价
FEIHONG/飞虹
23+
TO-252220
684210
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
FAIRCHILD/仙童
23+
TO252
50000
全新原装正品现货,支持订货
询价
FAIRCHILD/仙童
26+
TO252
43600
全新原装现货,假一赔十
询价
FAIRCHILD
24+
TO-252(DPAK)
8866
询价
仙童
05+
TO-252
8000
原装进口
询价
原厂
23+
TO-252
5000
原装正品,假一罚十
询价
更多FQD7N60供应商 更新时间2026-4-18 14:02:00