P4N20

N-CHANNEL200V-1.3ohm-4ATO-220POWERMOSTRANSISTOR

N-CHANNEL200V-1.3Ω-4ATO-220POWERMOSTRANSISTOR ■TYPICALRDS(on)=1.3Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■150oCOPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPE

STD4N20

N-CHANNEL200V-1.2ohm-4ADPAK/IPAKMESHOVERLAY??MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformance.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,makesitsuitableincovertersforli

STP4N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STP4N20

N-CHANNEL200V-1.3ohm-4ATO-220POWERMOSTRANSISTOR

N-CHANNEL200V-1.3Ω-4ATO-220POWERMOSTRANSISTOR ■TYPICALRDS(on)=1.3Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■150oCOPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPE

UF4N20

4A,200VN-CHANNELPOWERMOSFET

UF4N20Z

4A,200VN-CHANNELPOWERMOSFET