首页 >FQD4N20TM-TP>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VLOGICN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelQFET짰MOSFET200V,0.85A,1.40廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelEnhancementModePowerMOSFET GENERALFEATURES Vos=200V 'b=1.0A@Ves=10V |Roson)£1.35Q@Ves=10V |SOT-223package. | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 | TECHPUBLIC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.0A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
200VN-ChannelMOSFET Features •3.0A,200V,RDS(on)=1.4Ω(Max.)@VGS=10V •Lowgatecharge(Typ.5.0nC) •LowCrss(Typ.5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VLOGICN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.2A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.35Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
WeathersafeLargeBodiedRotaryIsolatorSwitch–4Pole20A Features&Benefits Suitableforarmouredcable. Solidneutral. On-loadswitchdisconnectors. SwitchcanberemovedfromDINRailassembly allowingforquickandeasyfix. Interlockedfrontcovercanonlyberemovedwhen inOFFposition. Lockableswitchpreventstampering. Toughdurablet | TIMEGUARD timeguard | TIMEGUARD |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TECH PUBLIC(台舟) |
23+ |
TO-252-3L |
200 |
三极管/MOS管/晶体管 > 场效应管(MOSFET) |
询价 | ||
FAIRCHIL |
SOT252 |
1000 |
原装长期供货! |
询价 | |||
FAIRCHILD |
24+ |
SOT252 |
119000 |
询价 | |||
仙童 |
05+ |
TO-252 |
8000 |
原装进口 |
询价 | ||
FAIRCHIL |
16+ |
TO252 |
93 |
全新原装现货 |
询价 | ||
原厂 |
23+ |
TO-252 |
5000 |
原装正品,假一罚十 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
FAIRCHIL |
25+23+ |
SOT252 |
41321 |
绝对原装正品全新进口深圳现货 |
询价 | ||
FAIRCHILD |
1822+ |
TO-252(D |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
FAIRCHIL |
24+ |
TO-252 |
90000 |
一级代理商进口原装现货、价格合理 |
询价 |
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