600V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：754.82 Kbytes 页数：8 Pages

Fairchild

仙童半导体

600V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：754.82 Kbytes 页数：8 Pages

Fairchild

仙童半导体

600V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：754.82 Kbytes 页数：8 Pages

Fairchild

仙童半导体

600V N-Channel MOSFET

ONSEMI

安森美半导体

Power MOSFET, N-Channel, QFET®, 600 V, 2.4 A, 3.4 Ω, DPAK

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •2.4A, 600V, RDS(on)= 3.4Ω（最大值）@VGS = 10 V, ID = 1.2A栅极电荷低（典型值：10.5nC)\n•低 Crss（典型值5pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

ONSEMI

安森美半导体

功率 MOSFET，N 沟道，QFET®，600 V，2.4 A，3.4 Ω，DPAK

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •2.4A, 600V, RDS(on)= 3.4Ω（最大值）@VGS = 10 V, ID = 1.2A栅极电荷低（典型值：10.5nC)\n•低 Crss（典型值5pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

ONSEMI

安森美半导体