型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
丝印:FQD2N60C;Package:D-PAK;N-Channel QFET짰 MOSFET 600 V, 1.9 A, 4.7 廓 Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high aval 文件:979.34 Kbytes 页数:8 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
丝印:FQD2N60C;Package:D-PAK;N-Channel QFET짰 MOSFET 600 V, 1.9 A, 4.7 廓 Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high aval 文件:979.34 Kbytes 页数:8 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
FQD2N60C | N-Channel QFET짰 MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high 文件:748.29 Kbytes 页数:9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
FQD2N60C | N-Channel QFET MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, an 文件:842.74 Kbytes 页数:8 Pages | KERSEMI | KERSEMI | |
FQD2N60C | 600V N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av 文件:617.97 Kbytes 页数:9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
FQD2N60C | N-Channel QFET짰 MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av 文件:742.85 Kbytes 页数:9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
FQD2N60C | N-Channel QFET짰 MOSFET 600 V, 1.9 A, 4.7 廓 Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high aval 文件:979.34 Kbytes 页数:8 Pages | ONSEMI 安森美半导体 | ONSEMI | |
N-Channel QFET짰 MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high 文件:748.29 Kbytes 页数:9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-Channel QFET짰 MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av 文件:742.85 Kbytes 页数:9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
FQD2N60C | 600V N-Channel MOSFET 文件:863.86 Kbytes 页数:9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
详细参数
- 型号:
FQD2N60C
- 功能描述:
MOSFET N-CH/600V/2A/A.QFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
TO252 |
8950 |
BOM配单专家,发货快,价格低 |
询价 | ||
ON |
23+ |
N/A |
10000 |
原装现货热卖库存 |
询价 | ||
FAIRCHILD |
24+ |
DPAK/TO252 |
12000 |
原装正品 价格优势 |
询价 | ||
ONSEMI/安森美 |
25+ |
TO-252 |
32000 |
ONSEMI/安森美全新特价FQD2N60CTM即刻询购立享优惠#长期有货 |
询价 | ||
FAIRCHILD |
SOT-252 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
询价 | |||
ON |
21+ |
TO-252 |
10000 |
全新原装公司现货
|
询价 | ||
ON |
21+ |
TO252 |
10000 |
十年信誉,只做原装,有挂就有现货! |
询价 | ||
ON/安森美 |
22+ |
TO-252 |
10000 |
原装正品 |
询价 | ||
ON/安森美 |
2021+ |
DPAKTO252 |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
ON(安森美) |
2023+ |
TO-252-2(DPAK) |
4550 |
全新原装正品 |
询价 |
相关芯片丝印
更多- FQD4P40TM
- FQP27P06
- FQP4N90C
- FQT2P25TF
- FQU5N50CTU-WS
- 2SA2029
- 2SA2029
- 2SA2029
- PZU22B1
- 2SA2029
- PUSB3FR4
- 2SA2029
- BD4935G-TR
- BD48L29G
- BD4935FVE-TL
- BD48L29G-TL
- BD48L29G-TR
- BD48L29G-TR
- BD4935G-TL
- BD4935FVE-TR
- S2FL8.0A
- BD4935FVE-TL
- BD4935G-TR
- BD4935FVE-TR
- BD4935G
- BD4935FVE-TR
- BD4935FVE-TL
- BD4935G-TR
- BD4935G-TL
- BD4935FVE-TR
- 2SA1037R
- BD4935FVE-TR
- BD4935FVE-TL
- BD48L29
- BD4935G-TR
- BD48L29G-TL
- BD4935FVE
- BD48L29G-TL
- BD4935G-TR
- BD48L29G-TL
- BD4935FVE-TR
- BD4935G-TL
- MPQ2013AGG-5
- BD48L29G-TR
- BD48L29G-TL
相关库存
更多- FQD7N10LTM
- FQP47P06
- FQPF4N90C
- FQU2N60CTU
- SM6T68AY
- BD4935G
- 2SA2029
- BD4935
- BD4935
- PUSB3FR6
- 2SA2029
- BD4935G-TL
- BD4935FVE-TL
- BD4935G-TL
- SMF440CA
- BD4935G-TR
- BD4935G-TL
- BD48L29G-TR
- BD48L29G-TR
- 2SA1037AK-R
- BD4935FVE-TL
- BD4935FVE-TL
- BD4935FVE-TR
- BD4935FVE-TR
- BD4935G-TR
- BD4935G-TL
- BD48L29G-TL
- BD4935
- BD48L29G-TL
- MP2013AGG-5
- 2SA1774RR
- BD5242G-1TR
- BD4935FVE-TR
- BD48L29G-TR
- BD4935G-TR
- BD4935G-TL
- BD4935G
- BD4935FVE-TL
- BD4935G-TR
- BD48L29G-TR
- 2SA1037/AK-R
- BD48L29G-TR
- BD48L29G-TR
- BD48L29G-TL
- ISL54208IRUZ-T