FQD2N60C中文资料安森美半导体数据手册PDF规格书

描述 Description

This N-Channel enhancement mode power MOSFET is

produced using ON Semiconductor’s proprietary planar

stripe and DMOS technology. This advanced MOSFET

technology has been especially tailored to reduce on-state

resistance, and to provide superior switching performance

and high avalanche energy strength. These devices are

suitable for switched mode power supplies, active power

factor correction (PFC), and electronic lamp ballasts.

特性 Features

• 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 0.95 A

• Low Gate Charge (Typ. 8.5 nC)

• Low Crss (Typ. 4.3 pF)

• 100 Avalanche Tested

• RoHS Compliant