FQD19N10L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=15.6A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQD19N10L

N-Channel100V(D-S)MOSFET

FQD19N10L

N-ChannelQFETMOSFET

FQD19N10LTF

N-channelEnhancementModePowerMOSFET

Features VDS=100V,ID=18.1A RDS(ON)

FQD19N10LTM

N-channelEnhancementModePowerMOSFET

Features VDS=100V,ID=18.1A RDS(ON)

FQD19N10LTM

100VN-ChannelMOSFET

Features LowGateCharge(Typ.14nC) LowCrss(Typ.35pF) VDS(V)=100V ID=15.6A(VGS=10V) RDS(ON)

FQD19N10LTM

N-ChannelQFET짰MOSFET100V,15.6A,100m廓

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst

FQD19N10TF

D-PAKTapeandReelDataD-PAKPackagingConfiguration:Figure1.0

FQD19N10TM

N-channelEnhancementModePowerMOSFET

Features VDS=100V,ID=18.1A RDS(ON)

FQI19N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths