| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NPNhigh-voltagetransistors DESCRIPTION NPNhigh-voltagetransistorinaTO-202;SOT128Bplasticpackage. FEATURES •Lowcurrent(max.150mA) •Highvoltage(max.210V). APPLICATIONS •Telephonesystems. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN7GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistorinaplastic,4-pinSOT223package. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS IntendedforapplicationsintheGHzrange | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPN7GHzwidebandtransistor | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
SiliconNPNRFTransistor DESCRIPTION •HighPowerGain •HighCurrentGainBandwidthProduct •LowNoiseFigure APPLICATIONS •DesignedforuseinMATVorCATVamplifiersandRF communicationssubscribersequipment. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
iscSiliconNPNRFTransistor DESCRIPTION •HighPowerGain •HighCurrentGainBandwidthProduct •LowNoiseFigure APPLICATIONS •DesignedforuseinMATVorCATVamplifiersandRF communicationssubscribersequipment. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
NPN7GHzwidebandtransistor | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN7GHzwidebandtransistor DESCRIPTION NPNwidebandtransistorinaSOT89plasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS IntendedforapplicationsintheGHzrangesuchasMATV orCATVamplifiersandR | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
250WATTS(AC)DC/DCSINGLEOUTPUT 250WATTS(AC)DC/DCSINGLEOUTPUT Features •SingleOutput •3Ux21(24)TEx166.5mm(24TEfor5Voutputs) •Weight1.7kg | POWERBOX Powerbox manufactures | POWERBOX | ||
LEDForFlashLightSource LEDForFlashLightSource ●Highoutputtypewithreflectorequipped. | CITIZEN Citizen Electronics Co., Ltd | CITIZEN | ||
PNPLowVCE(Sat)1.0Amptransistor DESCRIPTION: TheCENTRALSEMICONDUCTORCMLT591EisaPNPLowVCE(SAT)1.0Amptransistor,epoxymoldedinaspacesavingSOT-563surfacemountpackageanddesignedforapplicationsrequiringahighcurrentcapabilityandlowsaturationvoltages. MARKINGCODE:L59 | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SILICONPLANAREPITAXIALTRANSISTORS SILICONPLANAREPITAXIALTRANSISTORS PNPtransistor | CDIL CDIL | CDIL | ||
SOT-23-PowerTransistorandDarlingtons | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 | RECTRON | ||
PNPEPITAXIALPLANARSILICONTRANSISTOR PNPEPITAXIALPLANARSILICONTRANSISTOR ComplementaryCMMT491A | CDIL CDIL | CDIL | ||
SURFACEMOUNTPNPSILICONTRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCMPT591EtypeisaPNPsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighcurrent,generalpurposeamplifierapplications. MarkingCodeisC59. | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SURFACEMOUNTPNPSILICONTRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCMPT591EtypeisaPNPsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighcurrent,generalpurposeamplifierapplications. MarkingCodeisC59. | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SmallSignalTransistorPNP-Amp/SwitchTransistorChip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize19x19MILS DieThickness9.0MILS BaseBondingPadArea3.5x4.3MILS EmitterBondingPadArea3.5x4.5MILS TopSideMetalizationAl- | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SmallSignalTransistorPNP-Amp/SwitchTransistorChip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize19x19MILS DieThickness7.1MILS BaseBondingPadArea3.5x4.3MILS EmitterBondingPadArea3.5x4.5MILS TopSideMetalizationAl | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SmallSignalTransistorPNP-Amp/SwitchTransistorChip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize19x19MILS DieThickness5.9MILS BaseBondingPadArea3.5x4.3MILS EmitterBondingPadArea3.5x4.5MILS TopSideMetalizationAl | CentralCentral Semiconductor Corp 美国中央半导体 | Central |
详细参数
- 型号：
FM591
- 制造商：
Black Box Corporation
- 功能描述：
CAT5E KEYSTONE COUPLER UNSHIELDED-OFFICE WHITE
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FM |
21+ROHS |
SOP-8 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
FM |
23+ |
SOP-8 |
6500 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
FORMOSA |
23+ |
SOD |
7600 |
专注配单,只做原装进口现货 |
询价 | ||
FORMOSA |
23+ |
SOD |
7600 |
专注配单,只做原装进口现货 |
询价 | ||
fci |
dc00 |
原厂封装 |
12000 |
INSTOCK:6000/tr |
询价 | ||
JAE |
2308+ |
404476 |
一级代理,原装正品,公司现货! |
询价 | |||
JAE |
ROHS |
13352 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
FCT |
11 |
公司优势库存 热卖中! |
询价 | ||||
FCT from Molex |
2021+ |
母座 |
285000 |
专供连接器,军工合格供应商! |
询价 | ||
FCT |
新 |
163 |
全新原装 货期两周 |
询价 |
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