场效应管 / 高压MOSFERs

First

福斯特

9Amps 900 Voltage N Channel MOSFET

General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mod

文件：116 Kbytes 页数：2 Pages

FCI

富加宜

900V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

文件：679.15 Kbytes 页数：8 Pages

Fairchild

仙童半导体

900V N-Channel MOSFET

文件：814.06 Kbytes 页数：8 Pages

Fairchild

仙童半导体