FIR7N65FG规格书原装现货福斯特First-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
FIR7N65FG	文件：2.82486 Mbytes Page：8 Pages	Advanced N-Ch Power MOSFET-I 文件：2.82486 Mbytes 页数：8 Pages	FOSTER 福斯特半导体	FOSTER
FIR7N65FG	文件：300 bytes Page：1 Pages	场效应管 / 高压MOSFERs	First 福斯特	First
FIR7N65LG	文件：3.73969 Mbytes Page：8 Pages	Advanced N-Ch Power MOSFET-I 文件：3.73969 Mbytes 页数：8 Pages	FOSTER 福斯特半导体	FOSTER
FQA7N65C	文件：722.05 Kbytes Page：8 Pages	650V N-Channel MOSFET These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. 文件：722.05 Kbytes 页数：8 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB7N65C	文件：723.41 Kbytes Page：8 Pages	650V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand 文件：723.41 Kbytes 页数：8 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

更多FIR7N65FG供应商更新时间2025-10-11 9:38:00