FIR7N60FG规格书应用电路批发采购福斯特-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
FIR7N60FG	文件：5.2866 Mbytes Page：7 Pages	Advanced N-Ch Power MOSFET-I 文件：5.2866 Mbytes 页数：7 Pages	FOSTER 福斯特半导体	FOSTER
FIR7N60FG	文件：300 bytes Page：1 Pages	场效应管 / 高压MOSFERs	First 福斯特	First
FMF7N60	文件：2.65127 Mbytes Page：7 Pages	7A 600V N CHANNEL ISOLATED POWER MOSFET 文件：2.65127 Mbytes 页数：7 Pages	FCI 富加宜	FCI
FQA7N60	文件：581.25 Kbytes Page：8 Pages	600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs 文件：581.25 Kbytes 页数：8 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQA7N60	文件：369.61 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=7.7A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con 文件：369.61 Kbytes 页数：2 Pages	ISC 无锡固电	ISC

更多FIR7N60FG供应商更新时间2025-10-9 16:50:00