900V N-Channel MOSFET-T

文件：2.0721 Mbytes 页数：8 Pages

FOSTER

福斯特半导体

功率MOS/高压功率MOS

First

福斯特

900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：774.13 Kbytes 页数：8 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=6.4A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Static Drain-Source On-Resistance : RDS(on) =2.3Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

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ISC

无锡固电

900V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：611.92 Kbytes 页数：8 Pages

Fairchild

仙童半导体