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FHD4N60A

MOS(场效应管)

FeiHong

飞虹

FHD4N60A

场效应管(MOSFET)

E-CMOS

飞虹高科

MGP4N60E

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

文件:124.46 Kbytes 页数:6 Pages

MOTOROLA

摩托罗拉

MGP4N60E

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

文件:120.94 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

MGP4N60ED

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block

文件:146.13 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

技术参数

  • 漏源电压(Vdss):

    600V

  • 连续漏极电流(Id):

    4A

  • 功率(Pd):

    75W

  • 阈值电压(Vgs(th)@Id):

    4V@250uA

供应商型号品牌批号封装库存备注价格
FeiHong(飞虹)
2447
TO-252
315000
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
FeiHong(飞虹)
20+
TO-252-2
75
询价
26+
N/A
67000
一级代理-主营优势-实惠价格-不悔选择
询价
FEIHONG/飞虹
23+
TO252
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
FH/
25+
TSSOP-14
85000
原厂原包装,终端BOM表可配单
询价
FH/风华高科
23+
SOT-23
50000
全新原装正品现货,支持订货
询价
FH/风华高科
25+
SOT-23
90000
全新原装现货
询价
N/A
QQ咨询
TO-3
139
全新原装 研究所指定供货商
询价
原装
2318+
TO-3
5620
十年专业专注 优势渠道商正品保证公司现货
询价
FH/风华高科
25+
SOT-23
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
询价
更多FHD4N60供应商 更新时间2026-9-26 15:01:00