FGH30N60LSDTU资料datasheet下载行情报价-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
FGH30N60LSDTU	文件：714.63 Kbytes Page：9 Pages	Low saturation voltage: VCE(sat) =1.1V @ IC = 30A 文件：714.63 Kbytes 页数：9 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FGH30N60LSDTU	文件：100 bytes Page：1 Pages	Package：TO-247-3；包装：管件类别：分立半导体产品晶体管 - UGBT、MOSFET - 单描述：IGBT 600V 60A TO247-3	ONSEMI 安森美半导体	ONSEMI
FGW30N60VD	文件：656.97 Kbytes Page：8 Pages	Discrete IGBT (High-Speed V series) 600V / 30A 文件：656.97 Kbytes 页数：8 Pages	FUJI 富士通	FUJI
G30N60	文件：178.25 Kbytes Page：8 Pages	600V, SMPS Series N-Channel IGBT The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been 文件：178.25 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
G30N60	文件：221.78 Kbytes Page：8 Pages	60A, 600V, UFS Series N-Channel IGBT The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel 文件：221.78 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD

更多FGH30N60LSDTU供应商更新时间2026-1-30 13:29:00